| PART |
Description |
Maker |
| HB52E649E12-A6B HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory
|
| HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| KVR100X64C3/64 |
100 Mhz SDRAM 168-pin PC100 DIMM Memory Module
|
Kingston Technology
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH |
PC100 SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PC100 KMM366S1623CT-G8 KMM366S1623CT-GH KMM366S162 |
PC100 SDRAM MODULE Preliminary 初步PC100的内存模
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| V43728S04VCTG-10PC |
3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
